IPP041N12N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPP041N12N3 G
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 300 W 120 V Continuous Drain Current (ID):120 A 211 nC
| Parameter | Value |
|---|---|
| Gate to Source Threshold Voltage | 2 V |
| Gate Charge | 211 nC |
| Continuous Drain Current (ID) | 120 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.5 mΩ |
| Input capacitance | 13800 pF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 300 W |
| Drain to Source Breakdown Voltage (Vds) | 120 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 723
Distributors
pcbx
pcbxUnit Price$3.28550
Ext.Price$3.28550
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.28550 | $3.28550 |
| 10 | $2.18434 | $21.84340 |
| 25 | $2.04872 | $51.21800 |
| 50 | $1.92152 | $96.07600 |
| 100 | $1.80219 | $180.21900 |
| 300 | $1.65885 | $497.65500 |
| 500 | $1.52690 | $763.45000 |
| 1000 | $1.33882 | $1338.82000 |